An optical method for studying carrier diffusion in strained (InP)2/(GaP)2 quantum wires Academic Article uri icon

abstract

  • The carrier transport in strain-induced laterally ordered (InP)2/(GaP)2 quantum wire (QWR) samples was examined with a noncontact Haynes–Shockley diffusion measurement which utilized time-resolved scanning cathodoluminescence. An anisotropy in ambipolar diffusion along the [110] and [110] directions (perpendicular and parallel to the QWRs, respectively) was observed. The temperature dependence of this anisotropy was measured, revealing that carrier diffusion along the QWR direction is thermally activated.

publication date

  • January 1, 1998