Tuning the Electrical Properties of Si Nanowire Field-Effect Transistors by Molecular Engineering Academic Article uri icon

abstract

  • Abstract Exposed facets of n-type silicon nanowires (Si NWs) fabricated by a top-down approach are successfully terminated with different organic functionalities, including 1, 3- dioxan-2-ethyl, butyl, allyl, and propyl-alcohol, using a two-step chlorination/alkylation method. X-ray photoemission spectroscopy and spectroscopic ellipsometry establish the bonding and the coverage of these molecular layers. Field-effect transistors fabricated from these Si NWs displayed characteristics that depended critically on the type of molecular …

publication date

  • December 4, 2009

published in