Correlating exciton localization with compositional fluctuations in InGaNGaN quantum wells grown on GaN planar surfaces and facets of GaN triangular prisms Academic Article uri icon

abstract

  • We have used spatially and temporally resolved cathodoluminescence (CL) to study the carrier recombination dynamics of InGaN quantum wells (QWs) grown on (0001)-oriented planar GaN and {11¯01}-oriented facets of GaN triangular prisms prepared by lateral epitaxial overgrowth in a metal-organic chemical vapor deposition system. The effects of In migration during growth on the resulting QW thickness and composition were examined. We employed a variable temperature time-resolved CL imaging approach that enables a spatial correlation between regions of enhanced exciton localization, luminescence efficiency, and radiative lifetime with the aim of distinguishing between excitons localized in In-rich quantum dots and those in the surrounding Ga-rich QW regions.

publication date

  • January 1, 2007