Carrier relaxation dynamics and steady-state charge distributions in coupled InGaN/GaN multiple and single quantum wells Academic Article uri icon

abstract

  • We have examined the carrier capture dynamics and excitation dependent charge distributions of coupled InGaN∕GaN multiple quantum well samples. We measured the temporal evolution of time-delayed cathodoluminescence (CL) spectra to study the temperature- and excitation-dependent transfer of carriers from a surrounding confinement region into a coupled single quantum well. Samples possessing two different structures for the confinement region [i.e., number of quantum wells (QWs) and varying widths] were examined with CL. In order to study state filling of the SQW and QWs in the confinement region, we calculated the quasi-Fermi levels and carrier densities by utilizing a model that involves self-consistent solutions of the nonlinear Poisson-Schrodinger equation for wurtzite QWs including strain, deformation potentials, and polarization fields. Band-edge and effective mass parameters were first obtained from a strain- and In composition-dependent k⋅p calculation for wurtzite InxGa1−xN, using a 6×6 k⋅p Hamilto...

publication date

  • January 1, 2007