Crystal-melt interface near grain boundaries during growth of shaped silicon crystals Academic Article uri icon

abstract

  • Experimental data and a theoretical model dealing with the morphology of the crystal-melt interface near grain boundaries of different types during silicon crystal growth by the edge- defined film-fed growth method are presented. The relationship between the morphology of the crystal-melt interface and the boundary crystallographic parameters (the grain misorientation, the boundary plane orientation, the crystallographic direction of growth for adjacent grains) is established.

publication date

  • January 1, 1997