Observations of conduction-band structure of 4H- and 6H-SiC Academic Article uri icon

abstract

  • Ballistic electron-emission spectroscopy (BEES) and photoluminescence are used to study conduction-band structure related transport properties of the $4H$ and $6H$ polytypes of SiC. A secondary energy threshold at 2.7 eV is observed in the BEES spectrum of $4H\ensuremath{-}\mathrm{SiC},$ in good agreement with a value of 2.8 eV deduced from reported ab initio calculations. The results from $6H\ensuremath{-}\mathrm{SiC},$ are suggested to be influenced by transport properties of other polytype inclusions, also supported by band-edge transitions evident in $6H\ensuremath{-}\mathrm{SiC}$ photoluminescence spectra.

publication date

  • January 1, 2002