Studies of sub-micron gold islands on silicon by STM Academic Article uri icon

abstract

  • The formation and electrical properties of discrete islands in discontinuous Au films on Si(111) were studied with a scaning tunneling microscope (STM). Ohmic electrical contact between the STM tip and isolated gold islands was established and I–V characteristics of the AuSi junctions were measured. A typical Schottky diode behaviour with ideality factor close to 1 was observed. The STM appears to be an appropriate probe for electrical measurements of nano-scale diodes.

publication date

  • January 1, 1994