Tin dioxide on semiconductor as material for new electronics Academic Article uri icon

abstract

  • Tin dioxide has been used as a tunable electronically anisotropic material for creation of novel building blocks in electronics such as TEAMS (Tunable Electronically Anisotropic Material on Semiconductor). It has been found that swift heavy ion irradiation has a pronounced effect on the current/voltage characteristics (CVC) of SnO 2/Si bilayer structures. Even after low irradiation doses, these characteristics change dramatically and exhibit negative differential resistances. These features vanish after some time of relaxation and do not reappear after another ion irradiation.

publication date

  • December 1, 2008