Erratum:“Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire”[Appl. Phys. Lett. 73, 3090 (1998)] Academic Article uri icon

abstract

  • In reference to the work of Molnar and co-workers, 1, 2 these authors reported a growth rate of ca. 15 m/h and a threading dislocation density of 3108 cm 2, and not as we erroneously quoted. In a more recent work, this group has obtained a threading dislocation density as low as 5107 cm 2 for HVPE-grown GaN on sapphire. 3

publication date

  • March 8, 1999