Structural changes and crystallization of amorphous hydrogenated silicon generated by laser irradiation Academic Article uri icon

abstract

  • Structural instabilities at nucleation and crystallization of hydrogenated amorphous silicon (a- Si: H) induced by continuous laser irradiation are investigated by means of Raman scattering. The temporal evolution shows four stages, which depend on the laser intensity as follows.(a) For relatively low intensities, the amorphous Raman spectrum exhibits quasiperiodic changes.(b) At intermediate laser levels, traces of crystalline structure appear and disappear quasiperiodically.(c) For somewhat higher irradiation levels, but below the crystallization threshold, the Raman crystallinelike peak has an oscillatory behavior for some time and after that its intensity increases and saturates.(d) For irradiation levels above the threshold, the Raman crystalline peak intensity increases monotonically and rapidly. We propose the following model, that the optical field pumps the material athermally from the …

publication date

  • January 1, 1989