Nano-pendeo GaN growth of light emitting devices on silicon Academic Article uri icon

abstract

  • 抄録 This paper presents the results using an alternative defects and strain minimizing technique with nanostructures as the compliant layer to grow III-V nitrides onto foreign substrates. Defects reduction and stress relaxation had been observed through HRTEM on GaN grown on sapphire and silicon. Results of LED devices on silicon with performance compatible with those on sapphire are presented.

publication date

  • January 1, 2008