Optically active three-dimensionally confined structures realized via molecular beam epitaxical growth on nonplanar GaAs (111)B Academic Article uri icon

abstract

  • We report the first realization on nonplanar patterned substrates of optically active three‐dimensionally confined semiconductor volumes created in situ via a one‐step molecular beam epitaxial growth. Growth is carried out on pyramidal mesas on (111)B substrates and in a regime that results in the emergence of three equivalent {110} side facets which overtake the as‐patterned {100} side facets and lead to mesa pinch‐off. Transmission electron microscopy along with spatially and spectrally resolved cathodoluminescence provide evidence for emission from laterally confined regions with lateral linear dimensions ≲100 nm.

publication date

  • January 1, 1993