Irradiation induced pulsations of reverse biased metal oxide silicon structures Academic Article uri icon

abstract

  • The electronic behaviour of structures consisting of metal oxide layers on silicon substrates upon swift heavy ion irradiation has been studied. Specifically, it has been found that, under favorable circumstances, the radiation induced negative differential resistance which such structures often show in the reversed bias direction may lead to high frequency current pulsations at around 10 kHz frequency. Their amplitude increases with increasing applied voltage, and also the pulsation frequency shows a small increase. The current amplitude increases with increasing flux but gradually decreases with increasing fluence. These effects can be understood, in principle, by a simple oscillation circuit model. This model implies that the Ohmic resistivity in the oscillatory circuits must be lower than the one of the constituents by orders of magnitude. This super conductivity is in accordance with our understanding of the existence of a transient high temperature plasma along swift heavy ion tracks.

publication date

  • August 20, 2007