Electrical activity of tilt and twist grain boundaries in silicon Conference Paper uri icon


  • 16 Polycrystalline Semiconductors V with Д9т = 0.3° (as weakly-deviated) were used (see [4]). Here 0т is the angle misorientation for two neighbouring grains, Д9т - angle deviation from a special orientation, 2 - reciprocal density of coincident cites at GB plane. According to our earlier works [5-9], random tilt boundaries in EFG silicon are highly active to both MAC and MIC. This boundary displays continuous EBIC contrast (see, [5,6]), unbroken intergrain barrier with highly non-linear transversal IV characteristics and non-monotonic temperature dependencies of equilibrium transversal and longitudinal DC conductance (see [5,6,8]); maximal noise activity [7]; S-shaped longitudinal IV characteristics at liquid helium temperatures [9]. Weakly-deviated tilt boundaries are active to MIC, displaying a spot-like EBIC contrast (see, [5,6]). At the same time, this boundary displayed weak activity to MAC that is exhibited in similarly to the grain …

publication date

  • January 1, 1999