Diffusion processes for doping of C 60 (fullerene) thin films Academic Article uri icon

abstract

  • As part of our ongoing research program to produce a high-efficiency, low-cost, photovoltaicc ell based on the fullerene C 60, we report here on our first attempts at the intercalative doping of C60 thin films by the electrodiffusion of metals. Semiconductor behavior with decreased values of conductivity activation energy has been demonstrated for the doped samples. The results are explained by electrodiffusion of Au from an electrode, dominated by grain boundary diffusion. r 2002 Published by Elsevier Science B.V.

publication date

  • January 1, 2003