Forward tunneling current in HgCdTe photodiodes Academic Article uri icon

abstract

  • Current voltage characteristics of narrow‐gap Hg 1− x Cd x Te photodiodes, fabricated on liquid phase epitaxy and metalorganic chemical vapor deposition grown layers, have been investigated. It is shown that the tunneling‐recombination process is the dominant mechanism that determines the dark current at forward and at low reverse bias. This mechanism also determines the junction zero‐bias resistance.

publication date

  • January 1, 1994