Comment on “Magnetic-Field-Tuned Quantum Phase Transition in the Insulating Regime of Ultrathin Amorphous Bi Films” Academic Article uri icon

abstract

  • A recent Letter by Lin and Goldman [1] presented experimental data for the relative magnetoresistance (MR) in disordered thin films, which were interpreted as evidence of a quantum phase transition. Such films are known to exhibit a superconductor (SC)-insulator transi- tion as a function of disorder [2], and a huge peak in the resistance RBfi with magnetic field B [3,4]. These highly disordered samples were insulating at zero B. The experi- mental results supporting the quantum phase transition scenario are: (a) the relative magnetoresistance, MRB; B0fiºΩRBfi …

publication date

  • April 12, 2012