Silicon carbide diffusion bonding by spark plasma sintering Academic Article uri icon


  • This work reports results of silicon carbide plates, disks, pipes, and pipe–disk couples bonded by a spark plasma sintering apparatus. The joining was conducted at 1900° C for 30 min with a 35 MPa uniaxial pressure. The samples were analyzed by Scanning acoustic microscopy, which in turn revealed a low amount of small defects at the samples' periphery. Scanning acoustic microscopy results were verified through scanning electron microscopy and nanoindentation. It was concluded that Spark Plasma Sintering technique may serve as a valid and effective tool for diffusion bonding of high-temperature-resistant silicon carbide with different geometries.

publication date

  • January 1, 2015