- The present investigation is concerned with the effects produced in GaAs LEDs through gamma-ray irradiation, taking into account very shallow junction LEDs, in which the junction is only on the order of 0.1 micron beneath the semiconductor surface. The obtained results show that the exposure of surface-emitting P-type devices to gamma rays can bring about many desirable improvements in LED parameters. The observed changes are related to increased wavelength (desirable in GaAs devices to decrease material dispersion), decreased storage time (implies higher modulation rates), and the narrowing of linewidth for moderate dosages. All these improvements are obtained without any noticeable disadvantages. On the other hand, in connection with spectral changes, it might not be advisable to employ shallow junction heavily doped surface emitters in nuclear radiation environments.