Epitaxial lateral overgrowth of GaN over AlOxsurface formed on Si substrate Academic Article uri icon


  • An approach by which single crystal α-GaN can be grown laterally over oxidized AlAs ( AlO x ) ( formed on Si substrates is demonstrated. Regular α- Ga 2 -O 3 α- stripe templates, spatially separated by AlO x , AlO on which subsequent GaN growth is selectively seeded are formed. Since the boundary between the stripe template and AlO x AlO is nominally planar, two pyramidal planes on separated GaN can merge by growing laterally over the AlO x AlO (referred to as planar epitaxial lateral overgrowth). Transmission electron microscopy reveals that the number of structural defects in GaN laterally grown over the AlO x AlO is remarkably reduced compared to that in GaN grown on the stripe templates, and accordingly cathodoluminescence reveals a strong band edge emission from GaN laterally grown over the AlO x , AlO suggesting that this approach allows us to grow GaN on Si substrates with fewer defects.

publication date

  • January 1, 1999