Semiconductor device structure based on fullerene: Ag/C60 thin film Schottky barrier Academic Article uri icon

abstract

  • National Solar Energy Center, Ben-Gurion University of the Negev, Sede Boker Campus, 84990 ISRAEL, keugene@bgumail.bgu.ac.il +Department of Physics, Ben-Gurion University of the Negev, Beersheba, 84105 ISRAEL ~Department of Physical Electronics, Tel-Aviv University, Ramat-Aviv, 69978 ISRAEL … Abstract. A possibility to produce a Schottky barrier at the Ag/C6o thin film interface has been demonstrated. The device structure exhibited rectifying behavior in the dark and photovoltaic properties … Recently we demonstrated a possibility to produce a Schottky barrier between a C60 single crystal and silver paste [1]. We also reported on photovoltaic properties of C60 thin fdm - silicon heterojunction [2]. However, we didn't successfully produce any stable Schottky barrier with C60 thin films. Therefore, we decided to use an Ag layer as a substrate and to improve the C60 film crystallinity in order to produce a Schottky barrier …

publication date

  • August 11, 1998