Size-dependent ionization of impurities in GaN nanowires Conference Paper uri icon


  • Abstract The integration of nanowires into devices requires having dielectric materials in contact with the nanowire. Therefore understanding the effect of surrounding dielectric materials on properties of nanowires becomes quite relevant for the device integration of nanowires. In this work we present the effect of dielectric surroundings on electrical properties of gallium nitride nanowires. The conductivity of unintentionally n-doped gallium nitride nanowires is measured from 4.2 to 300 Kelvin. The ionization energies of …

publication date

  • March 1, 2008