Erratum: Corrigendum: Synthesis and size-dependent properties of zinc-blende semiconductor quantum rods Academic Article uri icon

abstract

  • In this letter, Fig. 1fand Supplementary Information Fig. S4 were partially wrongly characterized in relation to indexing the growth direction ofInAs wires that are found in the precipitate. Both figures are corrected below. We additionally comment that we observed in the powder X-ray diffraction pattern of the precipitate containing InAs wires that the [220] and [311] peaks of InAs are stronger than the [111] peak, unlike the rods (Fig. 3 in the original paper). The strong relative intensity of the [220] peak indicates that the growth of the wires takes place along the< 110> direction. This is further supported by the HRTEM image ofthe wires (Fig. 1fand Supplementary information, Fig. S4). The higher intensity ofthe [311] peak might be caused by other, non-wire shaped, crystalline InAs structures in this fraction.

publication date

  • January 1, 2004