Magnetic-field- and alloying-induced wetting of the ferroelectric domain structure in some smart materials Academic Article uri icon

abstract

  • Wetting of the ferroelectric domain walls is studied in external magnetic fields and for composition changes in $(\mathrm{Ba},\mathrm{Sr}){\mathrm{TiO}}_{3}$ and $\mathrm{Pb}(\mathrm{Zr},\mathrm{Ti}){\mathrm{O}}_{3}.$ We discuss the sensibility of a domain structure to concentration of alloying element in perovskite ferroelectrics. A considerable magnetic-field- and concentration-induced variation of the ferroelectric domain size and the paraelectric layer width is demonstrated. The concentration-temperature ``phase diagram'' showing the range of the wetting existence is calculated.

publication date

  • October 1, 1999