Comparison of strain in glow discharge a-Si: F and a-Si: H Academic Article uri icon


  • Abstract Raman scattering experiments were performed on a-Si: H and a-Si: F samples which had the same electron spin density and dark conductivity. It was found that the a-Si: F had a wider Raman spectrum than a-Si: H. This implies that there is a narrower bond angle distribution in the a-Si: H sample. This is consistent with the hypothesis that in addition to satisfying dangling bonds in a-Si, H also relieves strain in the sample. This proposition was reinforced by the widening of the Raman spectra of a-Si: H samples taken after H …

publication date

  • January 1, 1985