Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire Academic Article uri icon

abstract

  • The early stages of hydride vapor phase epitaxy (HVPE) of GaN on sapphire were studied using atomic force microscopy, field-emission scanning electron microscopy, cross-sectional transmission electron microscopy, and x-ray diffraction rocking curves. At the high growth rate used (∼ 33 nm/s), the films appear to be fully coalesced for growth periods as short as 1 s. A distinct surface and subsequent bulk transformation were observed, resulting in significantly smoother film surfaces and improved bulk morphology. The growth of thick (ie, 300 μm) GaN films using HVPE offers a promising technique for the deposition of high- quality substrates for GaN homoepitaxy.

publication date

  • January 1, 1998