Yellow luminescence and related deep levels in unintentionally doped GaN films Academic Article uri icon

abstract

  • The deep level energy distribution associated with the well-known ‘‘yellow luminescence’’ in GaN is studied by means of two complementary deep level techniques: photoluminescence and surface photovoltage spectroscopy. The combined experimental results show that the yellow luminescence is due to capture of conduction band electrons, or electrons from shallow donors ~with a maximum depth on the order of the thermal energy! by a deep acceptor level with a broad energy distribution, centered at ;2.2 eV below the conduction band edge. In addition, the results show that the density of yellow luminescence related states possesses a significant surface component. @S0163-1829~99!16215-5#

publication date

  • January 1, 1999