Defect reduction in GaN/(0001) sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers Academic Article uri icon

abstract

  • Transmission and scanning electron microscopies are used to examine the epitaxial lateral overgrowth of GaN on GaN nanocolumns grown on AlN/(0001) sapphire by molecular beam epitaxy. Initially, N-rich growth gave a bimodal morphology consisting of defect-free Ga-polar nanocolumns emanating from a compact, highly defective N-polar layer. Under subsequent Ga-rich conditions, the nanocolumns grew laterally to produce continuous Ga-polar overlayers. Threading dislocation (TD) densities in the overlayer were in the range of 10 8– 10 9 cm− 2, up to two orders of magnitude less than in the N-polar underlayer. It is proposed that the change in polarity is a key factor controlling the reduction in TD density.

publication date

  • January 1, 2008