Anisotropic structural, electronic, and optical properties of InGaAs grown by molecular beam epitaxy on misoriented substrates Academic Article uri icon

abstract

  • We have investigated the structural, electronic, and optical properties of partially strain‐relaxed InxGa1−xAs layers, grown by molecular beam epitaxy on both misoriented and nominally flat (001) GaAs substrates. We find large anisotropies in bulk strain relaxation, interfacial misfit dislocation density, dark‐line defect density, and electron mobility, as well as a polarization anisotropy in cathodoluminescence for epilayers grown on misoriented substrates, in comparison with those grown on flat substrates.

publication date

  • January 1, 1994