Structural and Optical Properties of Al2O3 with Si and Ge Nanocrystals Academic Article uri icon

abstract

  • Si and Ge nanocrystals were formed in alumina matrix by ion implantation and subsequent annealing. The phase separation of the Si nanocrystals was observed using X-ray photoelectron spectroscopy by monitoring Si 2p electrons. During nanocrystal formation with a high temperature annealing Si 0 signals corresponding to Si nanoclusters increases while Si 4+ signals related to a-SiO 2 disappears from the spectrum. The transition from amorphous to nanocrystalline phase for both Si and Ge nanoclusters and the compressive stress exerted on the formed nanocrystals were also studied by Raman spectroscopy. Photoluminescence spectra of the Al 2 O 3 containing nanocrystals were discussed by means of Ti and Cr impurities, as well as F centers. The existence of the amorphous Ge nanoclusters in alumina matrix significantly enhances the light emission of Ti 3+ …

publication date

  • January 1, 2007