Nanometric diamond delta doping with boron Academic Article uri icon

abstract

  • Diamond is desired for active semiconducting device because of it high carrier mobility, high voltage breakdown resistance, and high thermal diffusivity. Exploiting diamond as a semiconductor is hampered by the lack of shallow dopants to create sufficient electronic carriers at room temperature. In this work, nanometer thick, heavily boron doped epitaxial diamond ‘delta doped’ layers have been grown on ultra smooth diamond surfaces which demonstrate p type conduction with enhanced Hall mobilities of up to 120 cm2/Vs and sheet carrier concentrations to 6 × 1013 cm–2, thus enabling a new class of active diamond electronic devices. (© 2016 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)

publication date

  • January 1, 2017