Very long wavelength In x Ga1- x As/GaAs quantum well infrared photodetectors Academic Article uri icon

abstract

  • The paper presents a study and development of a low-dark current very long wavelength InxGa1-xAs/GaAs quantum-well infrared photodetectors (QWIPs). The detectivities of latticed matched GaAs/AlxGa1-xAs/GaAs QWIPs and HgCdTe detectors with similar cutoff wavelength were about 1 × 1012 and 1 × 1011cmvHz/W, respectively at T=10 K. The high optical gains and the small carrier capture probabilities exhibit the excellent carrier transport of the GaAs barriers and the potential of this heterobarrier system for very long wavelength (λ> 14 μm) QWIPs.

publication date

  • January 1, 1994