Lateral epitaxy overgrowth of GaN with NH3 flow rate modulation Academic Article uri icon

abstract

  • We demonstrate the effects of NH3 flow modulation on the lateral growth rate and morphology of GaN stripes employing lateral epitaxial overgrowth (LEO) by metalorganic chemical vapor deposition. The self-limiting growth mechanism, enhanced Ga diffusion on the (0001) plane, and Ga lateral supply are used to explain our observations. A lateral overgrowth rate to a vertical growth rate ratio of 2.1 and fully coalesced LEO GaN stripes after 1 h growth have been achieved.

publication date

  • January 1, 2000