Fabrication of sub-μm bipolar transistor structures by scanning probe microscopy Academic Article uri icon

abstract

  • We show how sub-μm sized transistor structures (down to 50 nm cross section) can be fabricated by thermally assisted electromigration of mobile dopants inside the semiconductor CuInSe 2 . CuInSe Small device structures are fabricated by application of an electric field to the sample via the contact, defined by a conducting atomic force microscope tip. The structures are characterized by nm scale scanning spreading resistance and scanning capacitance measurements to reveal the inhomogeneous doping profiles created by the electric field.

publication date

  • January 1, 1998